IMPLEMENTATION LEVEL

National

AFFECTED FLOW

Inflow

ANNOUNCED AS TEMPORARY

No

NON-TRADE-RELATED RATIONALE

No

ELIGIBLE FIRMS

firm-specific

JUMBO

No

TARIFF PEAK

No
← back to the state act
Inception date: 10 Dec 2012 | Removal date: open ended
Still in force

Capital injection and equity stakes (including bailouts)

On 10 December 2012, the Innovation Network Corporation of Japan (INCJ) announced its decision to lead the creation of a (government-backed) consortium to gather JPY 150bn ($1.8bn) and invest in the struggling Japanese chipmaker Renesas Electronics Corp. The INCJ and the consortium will underwrite the issuance of new shares, acquiring 75% (69.2% to the INCJ alone) of the total shares issued and outstanding in Renesas.

June 20th, 2017 Update: The INCJ sold 317,688,800 shares in Renesas Electronics bringing the INCJ capital equity in Renesas Electronics from 69.2% to 50.1%. The original investment in Renesas Electronics by INCJ was 150 billion yen (1.8 billion USD), after reducing the total investment to 50.1%, INCJ's approximate investment capital is 108 billion yen (941 million USD)


About the Innovation Network Corporation of Japan (INCJ)
In 2009, INCJ was created as a public-private investment fund to financially support industries "next-generation businesses. INCJ supports projects that technologies and varied expertise across industries and materialize open innovation. According to the INCJ website, the fund has an investment capacity of up to USD 20 billion. Although characterized as a public-private partnership, in fact only 0.1 billion of the 2.6 billion USD invested in the fund was provided by the private sector. The rest came from the Japanese government. Of the 0.1 billion USD said to be contributed by the private sector, 13.6 million USD was in fact provided by the Development Bank of Japan, a state-owned bank.

 

AFFECTED COUNTRIES

MAP
TABLE
EXPORT

AFFECTED SECTORS AND PRODUCTS

462 Electricity distribution & control apparatus; parts
8537 Boards, panels, consoles, desks, cabinets and other bases, equipped with two or more apparatus of heading 85.35 or 85.36, for electric control or the distribution of electricity, including those incorporating instruments or apparatus of Chapter 90, and nu
853710 For a voltage not exceeding 1,000 V
853720 For a voltage exceeding 1,000 V
471 Electronic valves & tubes; electronic components; parts
8541 Diodes, transistors and similar semiconductor devices; photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light emitting diodes; mounted piezoelectric crystals.
854110 Diodes, other than photosensitive or light emitting diodes
854121 With a dissipation rate of less than 1 W
854129 Other
854130 Thyristors, diacs and triacs, other than photosensitive devices
854140 Photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light emitting diodes
854150 Other semiconductor devices
854160 Mounted piezoelectric crystals
854190 Parts
8542 Electronic integrated circuits.
854231 Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
854232 Memories
854233 Amplifiers
854239 Other
854290 Parts

Please report this page in case you detect an inaccuracy in its content.